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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3659 DESCRIPTION *High Breakdown Voltage: VCES= 1700V (Min) *Built-in Damper Didoe APPLICATIONS *Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w VALUE 1700 6 8 50 150 UNIT V .cn mi e V A PC Collector Power Dissipation @ TC=25 W TJ Junction Temperature Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3659 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICBO Collector Cutoff Current VCE= 1400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A tf Fall Time w w scs .i w IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 .cn mi e 2.0 V 0.5 s isc Websitewww.iscsemi.cn 2 |
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